Selected Article

Title

Ta-N薄膜電阻製程及特性之研究

Characteristic of Tantalum-Nitride thin film Resistors

Description

[[abstract]]本研究在P-type矽基板的(100)結晶面上以反應性直流磁控濺鍍法濺鍍鉭基氮化物薄膜,以OES(Optical Emission Spectrometry)系統控制電漿中Ta及N之比例,製備不同比例之Ta-N薄膜。研究主要探討不同成份比例Ta-N薄膜經熱處理200℃~1000℃之晶體結構及顯微結構變化,及其對電阻率、電阻溫度係數的變化。 在OES(%)值於100%至70%之間,薄膜的厚度隨OES(%)降低而上升, OES(%)低於70%時因靶材中毒現象,造成薄膜厚度降低至5000A~6000A之範圍。OES 100%時為β-Ta結構,OES 70% ~ 60%為Ta2N之非晶質相,OES 58% ~ 45%為TaN結構。薄膜電阻率及電阻溫度係數隨OES(%)降低而升高,且在OES 70% ~ 60%有穩定的電阻率及穩定電阻溫度係數。OES 100%、OES 63%,及OES 48%條件下所製得的薄膜於熱處理溫度達1000℃時產生明顯的結晶相,其結晶相分別為B.C.C β-Ta、H.C.P Ta2N及H.C.P TaN之結構。薄膜之電阻率隨熱處理溫度升高而變化,當熱處理溫度於200℃至600℃時電阻率隨溫度的提高而上升,但溫度高於600℃後薄膜開始產生結晶且矽基板與鉭薄膜反應,電阻率降低。薄膜的電阻溫度係數隨熱處理溫度的升高而降低,不同成份之Ta-N薄膜在熱處理溫度於400℃及600℃時分別有最低的電阻溫度係數。 OES 63%之薄膜電阻率隨負偏壓及靶材電流的增加而降低。OES 63%之薄膜經由400℃,90 min熱處理後可以獲得到最高之電阻率及最低之電阻溫度係數之薄膜電阻材料。

[[abstract]]Tantalum-Nitride (Ta-N) thin films were sputtered onto the (100) crystal plane of P-type silicon substrates. The Ta/N ratios of the films were controlled by a optical emission spectrometry (OES). Phase transformations, microstructures, variation of electrical properties of the Ta-N films before and after heat-treatments were investigated. Thickness of Ta-N films increased with decreasing the OES% values between 100% and 70%. Due to target poisoned, the thickness of films were about 5000 ~ 6000Å when OES% was lowered than 70%. At OES 100%,Ta-N film showed -Ta structure. Amorphous Ta-N film with Ta2N composition was observed from the film deposited at OES between 45% and 58%. Before annealing, resistivity and temperature coefficient of resistor (TCR) of the films increased with decreasing OES% value. Consistent resistances and TCRs were obtained from the films deposited at condition of OES 70% ~ 60%. After heating-treatment, the films deposited at OES 100%,OES 63%,and OES 48% had crystal structure as -Ta,Ta2N,TaN respectively. When Ta-N films were heat-treated at temperature between 200oC ~ 600oC, the resistivities of the films increased with increasing heat-treatment temperature. Crystallization of the film became evident and the resistance decreased, when it was annealed at temperature higher than 600oC. Interactions between TaN films and Si Substrates were observed from 600oC heat-treated samples. Temperature Coefficient of resistor also decreased with increasing heat-treatment temperature. Ta-N films had the lowest TCR when they were annealed at temperature between 400oC and 600oC.Ta-N films deposited at OES 63% and annealed at 400oC for 90min had Ta2N structure, they had resistivities of 489.45-cm and TCR of 20.43 ppm/oC.

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