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Title
Changes in the electrical properties and thermal stability of HfO2 grown on Al2O3-passivated InSb by atomic layer deposition (ALD) were investigated. The deposited HfO2 on InSb at a temperature of 200 degrees C was in an amorphous phase with low inte...
Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-termin...
On-demand indistinguishable single photon sources are essential for quantum networking and communication. Semiconductor quantum dots are among the most promising candidates, but their typical emission wavelength renders them unsuitable for use in fib...