Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral STI does not seem to play a role in the degradation. The PPD area and an additional contribution independent on the pixel dimensions appear to be the main sources of the TID induced dark current increase.
Date of Appearance
Micro et nanotechnologies/Microélectronique; Image Sensors; CMOS Image Sensors; CIS; Active Pixel Sensors; APS; Monolithic Active Pixel Sensors; MAPS; Pinned Photodiodes; PPD; Ionizing Radiation; Total Ionizing Dose; TID; Dark current; Leakage current; Charge Transfer; Transfer Gate; Shallow Trench Isolation; STI; Deep Submicron Process; DSM; Radiation Hardening; RHBD
Status = Published; Subject = Sciences de l'ingénieur: Micro et nanotechnologies/Microélectronique; Type = Article; Institution = French research institutions: Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE); Institution = Université de Toulouse: Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)