ARTIKEL
8.499.752 Article(s)
1, 2, 3, 4, 5, 6 >>
Document(s)
Title
A comprehensive study of atomic-layer deposited thulium oxide (Tm2O3) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum ultra-violet variable angle spectroscopic ellipsometry, high-resolution transmission electron m...
We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3...